In this work. the possibility of using different generations of $\beta$-Ga2O3 as an ultra-wide-bandgap power semiconductor device for high power converter applications is explored. The competitiveness of $\beta$-Ga2O3 for power converters in still not well quantified. for which the major determining factors are the on-state resistance. https://www.spidertattooz.com/ZWO-ASI178MC-CMOS-Astrophotography-Camera/